IndiumV3, Russie, Analysis, bibRecord, 000056

Theory of g-factor enhancement in narrow-gap quantum well heterostructures

Identifieur interne : 000056 ( Russie/Analysis ); précédent : 000055; suivant : 000057

Theory of g-factor enhancement in narrow-gap quantum well heterostructures

Auteurs : RBID : Pascal:11-0441911

Descripteurs français

Pascal (Inist)
- Facteur g, Hamiltonien, Distorsion réseau, Interaction spin orbite, Niveau Landau, Calcul Hartree Fock, Facteur remplissage, Oscillation, Interaction électron électron, Semiconducteur bande interdite étroite, Puits quantique, Hétérostructure, Gaz électron 2 dimensions, Arséniure d'indium, Antimoniure d'aluminium, InAs, AlSb.

English descriptors

KwdEn :
- Aluminium antimonides, Electron-electron interactions, Fill factor, Hamiltonians, Hartree-Fock calculations, Heterostructures, Indium arsenides, Landau levels, Lattice distortion, Narrow band gap semiconductors, Oscillations, Quantum wells, Spin-orbit interactions, Two-dimensional electron gas, g-factor.

Abstract

We report on the study of the exchange enhancement of the g-factor in the two-dimensional (2D) electron gas in n-type narrow-gap semiconductor heterostructures. Our approach is based on the eight-band k . p Hamiltonian and takes into account the band nonparabolicity, the lattice deformation, the spin-orbit coupling and the Landau level broadening in the δ-correlated random potential model. Using the 'screened' Hartree-Fock approximation we demonstrate that the exchange g-factor enhancement not only shows maxima at odd values of Landau level filling factors but, due to the conduction band nonparabolicity, persists at even filling factor values as well. The magnitude of the exchange enhancement, the amplitude and the shape of the g-factor oscillations are determined by both the screening of the electron-electron interaction and the Landau level width. The 'enhanced' g-factor values calculated for the 2D electron gas in InAs/AlSb quantum well heterostructures are compared with our earlier experimental data and with those obtained by Mendez et al (1993 Phys. Rev. B 47 13937) in magnetic fields up to 30 T.

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Pascal:11-0441911

Le document en format XML

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<author><name sortKey="Krishtopenko, S S" uniqKey="Krishtopenko S">S. S. Krishtopenko</name>
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<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Laboratoire National des Champs Magnetiques Intenses (LNCMI-T), CNRS UPR 3228 Universite de Toulouse, 143 Avenue de Rangueil</s1>
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<author><name sortKey="Gavrilenko, V I" uniqKey="Gavrilenko V">V. I. Gavrilenko</name>
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<author><name sortKey="Goiran, M" uniqKey="Goiran M">M. Goiran</name>
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<term>Semiconducteur bande interdite étroite</term>
<term>Puits quantique</term>
<term>Hétérostructure</term>
<term>Gaz électron 2 dimensions</term>
<term>Arséniure d'indium</term>
<term>Antimoniure d'aluminium</term>
<term>InAs</term>
<term>AlSb</term>
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<front><div type="abstract" xml:lang="en">We report on the study of the exchange enhancement of the g-factor in the two-dimensional (2D) electron gas in n-type narrow-gap semiconductor heterostructures. Our approach is based on the eight-band k . p Hamiltonian and takes into account the band nonparabolicity, the lattice deformation, the spin-orbit coupling and the Landau level broadening in the δ-correlated random potential model. Using the 'screened' Hartree-Fock approximation we demonstrate that the exchange g-factor enhancement not only shows maxima at odd values of Landau level filling factors but, due to the conduction band nonparabolicity, persists at even filling factor values as well. The magnitude of the exchange enhancement, the amplitude and the shape of the g-factor oscillations are determined by both the screening of the electron-electron interaction and the Landau level width. The 'enhanced' g-factor values calculated for the 2D electron gas in InAs/AlSb quantum well heterostructures are compared with our earlier experimental data and with those obtained by Mendez et al (1993 Phys. Rev. B 47 13937) in magnetic fields up to 30 T.</div>
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<fC01 i1="01" l="ENG"><s0>We report on the study of the exchange enhancement of the g-factor in the two-dimensional (2D) electron gas in n-type narrow-gap semiconductor heterostructures. Our approach is based on the eight-band k . p Hamiltonian and takes into account the band nonparabolicity, the lattice deformation, the spin-orbit coupling and the Landau level broadening in the δ-correlated random potential model. Using the 'screened' Hartree-Fock approximation we demonstrate that the exchange g-factor enhancement not only shows maxima at odd values of Landau level filling factors but, due to the conduction band nonparabolicity, persists at even filling factor values as well. The magnitude of the exchange enhancement, the amplitude and the shape of the g-factor oscillations are determined by both the screening of the electron-electron interaction and the Landau level width. The 'enhanced' g-factor values calculated for the 2D electron gas in InAs/AlSb quantum well heterostructures are compared with our earlier experimental data and with those obtained by Mendez et al (1993 Phys. Rev. B 47 13937) in magnetic fields up to 30 T.</s0>
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Theory of g-factor enhancement in narrow-gap quantum well heterostructures

Theory of g-factor enhancement in narrow-gap quantum well heterostructures

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri